| 摘要 |
PURPOSE: A mom capacitor and a method thereof are provided to obtain higher capacitance than that of a conventional MOM structure and a MIM structure by forming the middle electrodes of a mesh pattern at contact interval. CONSTITUTION: A bottom electrode(300) is formed on a semiconductor board. A first interlayer insulating film(302) is formed on the top of the bottom electrode. A second interlayer insulating layer(314) is formed on the top of middle electrodes of the mesh pattern. A top electrode is connected to the second interlayer insulating layer through the middle electrode and via of the mesh pattern.
|
