首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Method for fabricating non-volatile memory device having charge trap layer
摘要
申请公布号
KR101003492(B1)
申请公布日期
2010.12.30
申请号
KR20070135869
申请日期
2007.12.21
申请人
发明人
分类号
H01L21/8247;H01L27/115
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Furnace control system
Valve
Pencil clip
Soaking pit cover carriage
Garter belt
Centrifuge recovery method
Television deflection power recovery circuit
Reset circuit for eccles-jordan triggered multivibrator circuits
Centrifugal variety apparatus for mixing and reacting liquid materials
Electric switch
Tractor guiding mechanism
Process for preparing nuts for blanching
Scissors
Maternity girdle
Ultra high frequency electric discharge devices
Apparatus for measuring extrusion pressures
Replacement valve seat for flush boxes
Impulse responsive network
Collapsible toilet seat top
Salt spreading apparatus for attaching to road vehicles
