| 发明名称 |
PLASMA TREATMENT METHOD |
| 摘要 |
<p>A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx1) layer using plasma excited by microwave power and forming a second fluorocarbon (CFx2) layer using plasma excited by an RF power.</p> |
| 申请公布号 |
WO2010151336(A1) |
申请公布日期 |
2010.12.29 |
| 申请号 |
WO2010US01832 |
申请日期 |
2010.06.25 |
| 申请人 |
TOKYO ELECTRON LIMITED;TAKABA, HIROYUKI |
发明人 |
TAKABA, HIROYUKI |
| 分类号 |
C23C16/00;H01L21/203;H01L29/30 |
主分类号 |
C23C16/00 |
| 代理机构 |
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