| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device and a substrate processing device are provided to form an insulation layer with low impurity density like carbon, hydrogen, nitrogen, and chlorine. CONSTITUTION: A raw gas supply system supplies raw materials including a preset element to a process container. A nitrogen- containing gas supply system supplies the nitrogen-containing gas to the process container. An oxygen-containing gas supply system supplies the oxygen-containing gas to the process container. A hydrogen-containing gas supply system supplies the hydrogen-containing gas to the process container. |
