SEMICONDCUTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device which is provided with a plurality of gate insulating films on a semiconductor substrate. Among the gate insulating films, the gate insulating film having the smallest film thickness in the HP transistor forming region is composed of a silicon oxide film, and the rest of the gate insulating films in the I/O transistor forming region and the transistor forming region are composed of a silicon oxynitride film.