NONVOLATILE RESISTANCE CHANGE RAM

摘要

Disclosed is a nonvolatile resistance change RAM. The nonvolatile resistance change RAM comprises: a first electrode; and a second electrode. An oxide layer is positioned between the first electrode and the second electrode. A reactive metal layer is positioned between the oxide layer and the second electrode and contains a metal in which a variance of standard free energy is -100kJ or less in the oxide reaction on the basis of 300K.