SUBSTRATE TREATMENT METHOD, COMPUTER RECORDING MEDIUM, AND SUBSTRATE TREATMENT SYSTEM

摘要

Provided are a substrate treatment method and system that: compute the in-plane change in measured dimensions of a resist pattern on a substrate and a pattern on a film to be treated; use formula (1) to compute the target in-plane change in the dimensions of the resist pattern; use formula (2) to correct a heat treatment temperature; and, after correction, perform photolithography and etching, thereby forming a prescribed pattern on a film to be treated on a substrate. (1) ?Xt = ?Xl - ?Xe (2) ?T = 1/a × F-1(?Xt - ?Xl) ?Xt is the target in-plane change in the dimensions of the resist pattern, ?Xl is the in-plane change in the measured dimensions of the resist pattern, ?Xe is the in-plane change in the measured dimensions of the pattern on the film to be treated, ?T is the correction to the treatment temperature, a is a factor for conversion between amount of change in treatment temperature and resist pattern dimensions, and F is a function from amount of change in treatment temperature to amount of change in pattern dimensions.