发明名称 WHITE NANO LIGHT EMITTING DIODE AND METHOD FOR MAKING THE SAME
摘要 PURPOSE: A white-nano-light emitting diode and a method for manufacturing the same are provided to stably maintain white light emission using a nano-structure pattern in a chip manufacturing process. CONSTITUTION: An active layer is stacked on an n-type semiconductor layer. A p-type semiconductor layer is stacked on the active layer. A p-GaN layer(400) is grown on a green multi-quantum-well(MQW) layer(300). The MQW layer is grown on an n-GaN layer(200). A nano-structure pattern is formed on the n-GaN layer. A protrusion region and a non-protrusion region are formed on the n-GaN layer.
申请公布号 KR20100136684(A) 申请公布日期 2010.12.29
申请号 KR20090054901 申请日期 2009.06.19
申请人 INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY 发明人 KWAK, JOON SEOP;KWON, KWANG WOO;KANG, KI MAN;PARK, MIN JOO
分类号 H01L33/22 主分类号 H01L33/22
代理机构 代理人
主权项
地址