WHITE NANO LIGHT EMITTING DIODE AND METHOD FOR MAKING THE SAME
摘要
PURPOSE: A white-nano-light emitting diode and a method for manufacturing the same are provided to stably maintain white light emission using a nano-structure pattern in a chip manufacturing process. CONSTITUTION: An active layer is stacked on an n-type semiconductor layer. A p-type semiconductor layer is stacked on the active layer. A p-GaN layer(400) is grown on a green multi-quantum-well(MQW) layer(300). The MQW layer is grown on an n-GaN layer(200). A nano-structure pattern is formed on the n-GaN layer. A protrusion region and a non-protrusion region are formed on the n-GaN layer.
申请公布号
KR20100136684(A)
申请公布日期
2010.12.29
申请号
KR20090054901
申请日期
2009.06.19
申请人
INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY
发明人
KWAK, JOON SEOP;KWON, KWANG WOO;KANG, KI MAN;PARK, MIN JOO