| 发明名称 |
Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
| 摘要 |
<p>Non-volatile memory cells store a level of charge corresponding to the data being stored in a dielectric material storage ele</p> |
| 申请公布号 |
EP1777752(B1) |
申请公布日期 |
2010.12.29 |
| 申请号 |
EP20070002289 |
申请日期 |
2002.10.31 |
| 申请人 |
SANDISK CORPORATION |
发明人 |
HARARI, ELIYAHOU;SAMACHISA, GEORGE;YUAN, JACK H.;GUTERMANN, DANIEL C. |
| 分类号 |
H01L29/792;G11C11/56;G11C16/04;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788 |
主分类号 |
H01L29/792 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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