发明名称 |
DRAM transistor with a gate formed in a substrate trench |
摘要 |
<p>The invention includes a transistor device (69) having a semiconductor substrate (12) with an upper surface. A pair of source/drain regions (41,59) are formed within the semiconductor substrate and a channel region (46) is formed within the semiconductor substrate and extends generally perpendicularly relative to the upper surface of the semiconductor substrate. A gate (54) is formed within the semiconductor substrate between the pair of the source/drain regions (41,59) and can surround the channel region and/or one of the source/drain regions.</p> |
申请公布号 |
EP2267769(A2) |
申请公布日期 |
2010.12.29 |
申请号 |
EP20100011474 |
申请日期 |
2005.08.29 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANH, TANG;HALLER, GORDON;BROWN, KRIS;EARL, ALLEN, T., III |
分类号 |
H01L21/8242;H01L21/336;H01L27/108;H01L29/10;H01L29/417;H01L29/423;H01L29/78 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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