发明名称 CHEMICALLY AMPLIFIED RESIST MATERIAL AND METHOD FOR FORMING PATTERN USING SAME
摘要 <p>A resist film (102) is formed, on a substrate (101), from a chemically amplified resist material which contains a polymer that contains an acid-cleavable group and a maleic acid derivative that has an onium salt having an anionic moiety and a cationic moiety and is covalently bonded to a sulfonic acid group that forms the anionic moiety. Next, a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light, and then the resist film (102) having been subjected to the pattern exposure is heated. After that, the heated resist film (102) is developed, so that a resist pattern (102a) is formed from the resist film (12).</p>
申请公布号 WO2010150428(A1) 申请公布日期 2010.12.29
申请号 WO2010JP00190 申请日期 2010.01.15
申请人 PANASONIC CORPORATION;ENDOU, MASAYUKI;SASAGO, MASARU 发明人 ENDOU, MASAYUKI;SASAGO, MASARU
分类号 G03F7/039;G03F7/004 主分类号 G03F7/039
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