发明名称 |
CHEMICALLY AMPLIFIED RESIST MATERIAL AND METHOD FOR FORMING PATTERN USING SAME |
摘要 |
<p>A resist film (102) is formed, on a substrate (101), from a chemically amplified resist material which contains a polymer that contains an acid-cleavable group and a maleic acid derivative that has an onium salt having an anionic moiety and a cationic moiety and is covalently bonded to a sulfonic acid group that forms the anionic moiety. Next, a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light, and then the resist film (102) having been subjected to the pattern exposure is heated. After that, the heated resist film (102) is developed, so that a resist pattern (102a) is formed from the resist film (12).</p> |
申请公布号 |
WO2010150428(A1) |
申请公布日期 |
2010.12.29 |
申请号 |
WO2010JP00190 |
申请日期 |
2010.01.15 |
申请人 |
PANASONIC CORPORATION;ENDOU, MASAYUKI;SASAGO, MASARU |
发明人 |
ENDOU, MASAYUKI;SASAGO, MASARU |
分类号 |
G03F7/039;G03F7/004 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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