| 发明名称 |
SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURE THEREOF |
| 摘要 |
<p>A first insulating film (2) is formed on a semiconductor substrate (1), wiring grooves (3) are formed on the first insulating film (2), a metal film (5) is embedded in the inside of each of the wiring grooves (3) to form a first wiring line (6). Subsequently, a protective film (7) is formed on the first insulating film (2) and the first wiring line (6), and a reactive layer (8) is formed on the interface between the first wiring line (6) and the protective film (7).</p> |
| 申请公布号 |
WO2010150430(A1) |
申请公布日期 |
2010.12.29 |
| 申请号 |
WO2010JP00444 |
申请日期 |
2010.01.27 |
| 申请人 |
PANASONIC CORPORATION;HARADA, TAKESHI;SHIBATA, JUNICHI;UEKI, AKIRA |
发明人 |
HARADA, TAKESHI;SHIBATA, JUNICHI;UEKI, AKIRA |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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