发明名称 GAS SUPPLY DEVICE, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 <p>PURPOSE: A gas supply device, a substrate processing device, and a substrate processing method are provided to uniformize, optimize, and correct a process property in the outermost part of a substrate. CONSTITUTION: A gas process supply unit(66) supplies process gas for processing a substrate to a gas introduction member. A process gas supplying path(64) spills the process gas from the processing gas supply unit. A plurality of branch paths are branched from the process gas supply path. An additional gas supply path(76) is connected to an additional gas supply unit and a gas introduction member.</p>
申请公布号 KR20100136951(A) 申请公布日期 2010.12.29
申请号 KR20100114004 申请日期 2010.11.16
申请人 TOKYO ELECTRON LIMITED 发明人 MASUDA NORIIKI
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
代理机构 代理人
主权项
地址