| 摘要 |
<p>In an interlayer insulating film (19) and a gate insulating film (13), a recessed part (20b) is formed that penetrates through the interlayer insulating film (19) to make a recess in a gate insulating film portion (13c) configuring the dielectric layer of a storage capacitor (22), the recessed part being covered with a pixel electrode (21p), for configuring an upper electrode (21pc) of the storage capacitor (22) at a pixel electrode portion corresponding to the bottom of the recessed part (20b).</p> |
