| 摘要 |
Lighting unit comprises at least one light emitting diode as light source, where the light emitting diode emits a primary radiation in a range of 300-570 nm and this radiation is converted partially or completely into longer wave radiation by a phosphor, which is exposed to the primary radiation of the light emitting diode. The conversion of primary radiation into longer wave radiation is carried out using at least one phosphor, which is derived from a cation and a silicon nitride or a derivative of a nitride and which emits radiation with peak emission wavelength at 430-670 nm. Lighting unit comprises at least one light emitting diode as light source, where the light emitting diode emits a primary radiation in a range of 300-570 nm and this radiation is converted partially or completely into longer wave radiation by a phosphor, which is exposed to the primary radiation of the light emitting diode and its structure is based on nitrides or their derivatives. The conversion of primary radiation into longer wave radiation is carried out using at least one phosphor, which is derived from a cation and a silicon nitride or a derivative of a nitride, and which emits radiation with peak emission wavelength at 430-670 nm, where the cation of the phosphor is partially replaced by a dopant comprising a divalent europium cation (Eu 2>+>) or a trivalent cerium cation (Ce 3>+>) and the cation comprises at least one of the divalent metals comprising barium, calcium and strontium and/or one of the trivalent metals comprising lutetium, lanthanum, gadolinium and yttrium. The phosphor comprises silicon nitride compound of formula (M 3Si 6N 11). M : cation. An independent claim is also included for a pigment with day-light fluorescence, preferably the phosphor, whose structure is based on nitrides or its derivatives. |
