发明名称 |
PROCESS FOR PRODUCING ZNO SINGLE CRYSTAL, SELF-SUPPORTING ZNO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF MG-CONTAINING ZNO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING MG-CONTAINING ZNO MIXED SINGLE CRYSTAL FOR USE IN THE SAME |
摘要 |
<p>A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of -c plane, of the single crystal grown by the liquid phase epitaxial growth method.</p> |
申请公布号 |
EP2267193(A1) |
申请公布日期 |
2010.12.29 |
申请号 |
EP20090726041 |
申请日期 |
2009.03.18 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
SEKIWA, HIDEYUKI;KOBAYASHI, JUN;MIYAMOTO, MIYUKI;OHASHI, NAOKI;SAKAGUCHI, ISAO;WADA, YOSHIKI |
分类号 |
C30B29/16;C30B9/08;C30B19/02;C30B33/00;H01L21/02;H01L21/368 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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