| 摘要 |
<p>In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening (212) is formed which extends entirely through the substrate A first material (220) is deposited along sidewalls (218) of the opening at a temperature of less than or equal to about 200 degree C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder- wetting material (224) is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder (240) is provided within the opening and over the solderwetting material. FIGURE 13</p> |
