发明名称 FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor
摘要 Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
申请公布号 US7859029(B2) 申请公布日期 2010.12.28
申请号 US20070621191 申请日期 2007.01.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KYU-SANG;YOO KYU-TAE;SHIM JEO-YOUNG;KIM JIN-TAE;CHO YEON-JA
分类号 H01L29/78 主分类号 H01L29/78
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