发明名称 |
FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor |
摘要 |
Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
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申请公布号 |
US7859029(B2) |
申请公布日期 |
2010.12.28 |
申请号 |
US20070621191 |
申请日期 |
2007.01.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYU-SANG;YOO KYU-TAE;SHIM JEO-YOUNG;KIM JIN-TAE;CHO YEON-JA |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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