HIGH POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH POWER SEMICONDUCTOR DEVICE

摘要

PURPOSE: The manufacturing method of the high power semiconductor device and high power semiconductor device improves the electron mobility of the channel region. The internal pressure is multiplied without the change of the design rule. On-resistance and brake voltage property are improved. CONSTITUTION: A plurality of element isolation regions(111) is formed in the semiconductor substrate(100). The first conductive well(120) is formed from the first element isolation region in the semiconductor substrate including the second element isolation region. The gate(132) is formed on the first conductive well.