| 摘要 |
A device having a resistive memory element, a control device, a digit line and a sensing circuit. The sensing circuit is configured to sense a voltage correlative to a resistance state of the resistive memory element. The sensing circuit if further configured to sense the voltage correlative to the resistance state after a waiting period that is less than or equal to the product of a capacitance of a digit line and a total resistance of the control device.
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