| 摘要 |
A chemical mechanical polishing (CMP) slurry and a chemical mechanical polishing (CMP) apparatus and method reduce defects, such as scratches, while maintaining a high polishing rate of a target film to be polished through a CMP process. The CMP slurry includes a ceria-based abrasive having a concentration of 0.001-10 percent by weight and a silica-based abrasive having a concentration of 1-24 percent by weight.
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