| 发明名称 |
Method for fabricating transistor with thinned channel |
| 摘要 |
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.
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| 申请公布号 |
US7858481(B2) |
申请公布日期 |
2010.12.28 |
| 申请号 |
US20050154138 |
申请日期 |
2005.06.15 |
| 申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;CHAU ROBERT S.;DATTA SUMAN;DOCZY MARK L.;DOYLE BRIAN S.;KAVALIEROS JACK T.;MAJUMDAR AMLAN;METZ MATTHEW V.;RADOSAVLJEVIC MARKO |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
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