发明名称 |
Systems and methods for integrated circuits comprising multiple body biasing domains |
摘要 |
Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment of the present invention, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material.
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申请公布号 |
US7859062(B1) |
申请公布日期 |
2010.12.28 |
申请号 |
US20040956722 |
申请日期 |
2004.09.30 |
申请人 |
KONIARIS KLEANTHES G;MASLEID ROBERT PAUL;BURR JAMES B |
发明人 |
KONIARIS KLEANTHES G.;MASLEID ROBERT PAUL;BURR JAMES B. |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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