发明名称 Method to restore hydrophobicity in dielectric films and materials
摘要 Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
申请公布号 US7858294(B2) 申请公布日期 2010.12.28
申请号 US20070784081 申请日期 2007.04.05
申请人 HONEYWELL INTERNATIONAL INC. 发明人 HACKER NIGEL P.;THOMAS MICHAEL;DRAGE JAMES S.
分类号 H01L21/465;B08B7/00;B32B3/10;G03F7/16;G03F7/40;H01L21/02;H01L21/3105;H01L21/312;H01L21/316;H01L21/768 主分类号 H01L21/465
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