| 摘要 |
A semiconductor device according to an embodiment of the present invention includes: a transistor including, a gate insulator formed of an insulating layer deposited on a substrate, and a gate electrode formed of an electrode layer deposited on the insulating layer; a capacitor including, a first capacitor electrode formed of the electrode layer, a first capacitor insulator formed on the first capacitor electrode, a second capacitor electrode formed on the first capacitor insulator, a second capacitor insulator formed on the second capacitor electrode, and a third capacitor electrode formed on the second capacitor insulator; and line patterns which are in contact with a contact plug for the transistor, a contact plug for the first capacitor electrode, a contact plug for the second capacitor electrode, and the third capacitor electrode.
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