发明名称 |
Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device |
摘要 |
A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device.
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申请公布号 |
US7859057(B2) |
申请公布日期 |
2010.12.28 |
申请号 |
US20090536618 |
申请日期 |
2009.08.06 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
YEDINAK JOSEPH A.;WOODIN RICHARD L.;REXER CHRISTOPHER L.;SHENOY PRAVEEN MURALHEEDARAN;OH KWANGHOON;YUN CHONGMAN |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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