发明名称 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
摘要 A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device.
申请公布号 US7859057(B2) 申请公布日期 2010.12.28
申请号 US20090536618 申请日期 2009.08.06
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 YEDINAK JOSEPH A.;WOODIN RICHARD L.;REXER CHRISTOPHER L.;SHENOY PRAVEEN MURALHEEDARAN;OH KWANGHOON;YUN CHONGMAN
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项
地址