发明名称 Method for measuring interface traps in thin gate oxide MOSFETS
摘要 A method for measuring interface traps in a MOSFET, includes measuring charge pumping current of a pulse wave form for various frequencies over a predetermined frequency range, creating plotted points of the measured charge pumping current versus the predetermined frequency range, determining the total number of interface traps participating in the charge pumping current by calculating the slope of a best fit line through the plotted points.
申请公布号 US7859289(B2) 申请公布日期 2010.12.28
申请号 US20100831122 申请日期 2010.07.06
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CHATTERJEE TATHAGATA;CHATTERJEE AMITAVA
分类号 G01R31/28 主分类号 G01R31/28
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