| 摘要 |
<p>PURPOSE: A charge trap flash memory device with a GST nano dot is provided to improve the device property by increasing the trapped charge quantity and increasing trap density. CONSTITUTION: A semiconductor substrate(110) includes a source region and a drain region separated by a channel region. A tunneling insulating layer is formed on the channel region of the semiconductor substrate. A chalcogenide based compound nano dot is formed on the tunneling insulation layer. A blocking insulation layer(140) is formed on the tunneling insulation layer to cover the chalcogenide based compound nano dot.</p> |
