发明名称 |
SEMICONDUCTOR PHOTOELECTRIC GENERATOR AND METHOD OF MAKING SAID GENERATOR |
摘要 |
FIELD: physics. ^ SUBSTANCE: semiconductor photoelectric generator is in form of a contact-switched array of micro-photocells, one or two linear dimensions of which are comparable with diffusion distance of minority charge carriers in the base region with p- or n-type conduction, and the planes of p-n junctions and isotype junctions are perpendicular to the working surface of the generator. The p-n junctions and isotype junctions are in form of a heterojuction with a wide-zone n+ or (p+) layer with an interlayer of tunnel-thin wide-zone film having intrinsic conduction. The entire working surface is coated with an antireflecting, passivating film with up to 5% hydrogen content. The invention also discloses a method of making semiconductor photoelectric generators. ^ EFFECT: high efficiency and low cost of making photoelectric generators consisting of multiple micro-photocells. ^ 5 cl, 1 dwg, 1 ex |
申请公布号 |
RU2408111(C2) |
申请公布日期 |
2010.12.27 |
申请号 |
RU20090105792 |
申请日期 |
2009.02.20 |
申请人 |
ROSSIJSKAJA AKADEMIJA SEL'SKOKHOZJAJSTVENNYKH NAUK GOSUDARSTVENNOE NAUCHNOE UCHREZHDENIE VSEROSSIJSKIJ NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT EHLEKTRIFIKATSII SEL'SKOGO KHOZJAJSTVA (GNU VIEHSKH ROSSEL'KHOZAKADEMII) |
发明人 |
ZADDEH VITALIJ VIKTOROVICH;STREBKOV DMITRIJ SEMENOVICH |
分类号 |
B82B1/00;B82B3/00;H01L31/042 |
主分类号 |
B82B1/00 |
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