发明名称 NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER
摘要 <p>A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.</p>
申请公布号 KR20100135967(A) 申请公布日期 2010.12.27
申请号 KR20107026833 申请日期 2009.04.06
申请人 APPLIED MATERIALS, INC. 发明人 ZHOU JIANHUA;PADHI DEENESH;JANAKIRAMAN KARTHIK;CHENG SIU F.;YU HANG;SARIPALLI YOGANAND N.;SUMMAN TERSEM
分类号 H05H1/34;H01L21/205;H01L21/3065 主分类号 H05H1/34
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