发明名称 |
NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER |
摘要 |
<p>A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.</p> |
申请公布号 |
KR20100135967(A) |
申请公布日期 |
2010.12.27 |
申请号 |
KR20107026833 |
申请日期 |
2009.04.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ZHOU JIANHUA;PADHI DEENESH;JANAKIRAMAN KARTHIK;CHENG SIU F.;YU HANG;SARIPALLI YOGANAND N.;SUMMAN TERSEM |
分类号 |
H05H1/34;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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