| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve an electrical characteristic with respect to a semiconductor substrate by forming a spiked conductive layer on the semiconductor substrate. CONSTITUTION: An insulating film(110) is deposited on the upper side of a cleaned semiconductor substrate(100). A photo-resist film is formed on the insulating film. A photo-resist film pattern is formed on the photo-resist film through an exposure process and a developing process using a mask for forming a contact region. The insulating film is etched using the photo-resist film pattern as a mask in order to form the contact region. An etchback process is performed with respect to a barrier metal until the semiconductor substrate is exposed.
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