发明名称 HIGH RESISTANCE CERMET RESISTOR AND METHOD OF FORMING THE SAME
摘要 PURPOSE: A high resistance cermet resistor and a forming method thereof are provided to prevent hypoxia by selectively performing anodizing process after a deposition process. CONSTITUTION: A first photoresist pattern is formed on a substrate(10). A metal electrode(30) is deposited on the front of a substrate. A first photo resistor pattern is removed from the substrate. A second photo resist pattern is formed on the substrate without a resistor formation position. A mixture is deposited on the front of the substrate and is made of active material and stable metal. A cermet resistor(60) is formed by anodizing the mixture. A second photoresist pattern is removed from the substrate.
申请公布号 KR20100135469(A) 申请公布日期 2010.12.27
申请号 KR20090053852 申请日期 2009.06.17
申请人 SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 SUH, SU JEONG;LIM, SEUNG KYU;NA, SEONG HUN;KIM, JIN SOO;KIM, JONG CHEON;KIM, TAE SUNG;JU, BEOM SEOK;LEE, KWANG KEUN;JANG, JAE GWON
分类号 H01C10/32;H01C1/012 主分类号 H01C10/32
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