| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of eliminating breakage of a wafer, even if activating FLA is performed at a higher temperature, and of reducing SD extension resistance. SOLUTION: When high-intensity flash lamp annealing irradiation is performed for heating a wafer for 0.1 to 10 ms at no less than 1,100°C wafer surface temperature, the wafer-surface temperature immediately prior to the irradiation is set at a high temperature range of 800 to 1,000°C. Diffusion of impurities can be prevented, by performing wafer preheating with flash whose waveform has been adjusted. By the use of the method, the wafer surface which does not form amorphous layers can be activated effectively, as well as a low-resistance shallow junction with few defects is thereby formed. COPYRIGHT: (C)2011,JPO&INPIT
|
