SUBSTRATE PROCESSING METHOD, FILM STRESS CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus for controlling film stress. SOLUTION: In the substrate processing method for alternately supplying and discharging gas containing chlorine and ammonia gas to a processing chamber 201 composing a space for processing a wafer 200 to form a desired thin film on the wafer 200, gas supply time is controlled so that the supply time of the ammonia gas is twice the supply time of gas containing chlorine. COPYRIGHT: (C)2011,JPO&INPIT