METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: The capacitor forming method in which the bottom electrode of the cylindrical shape controls auger or the phenomenon falling down and the capacitor forming method of the semiconductor device more a lot secures the electrostatic capacity is exhibited. CONSTITUTION: The dielectric layer is evaporated on the bottom electrode(501). The upper electrode is evaporated on the dielectric layer and the capacitor structure is embodied. It evaporates the High-k material like the zirconium oxide and the dielectric layer is formed. The upper electrode is formed with the chemical vapor deposition with the deposited titanium nitride layer, and the atomic layer deposition into the multi layer of the conductive polysilicon layer and deposited ruthenium layer.