| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein neither decoloration nor deformation is caused by ultraviolet irradiation applied when forming a gate insulating film made of a silicon oxide film. SOLUTION: This method of manufacturing the semiconductor device includes a process to form a polysilicon semiconductor thin film 13 on a base material 10, a process to form each region for a channel, source diffusion, and drain diffusion in the polysilicon semiconductor thin film 13, a process to form an insulating film precursor 14' on the polysilicon semiconductor thin film 13, a process to irradiate ultraviolet rays 27 to the insulating film precursor 14', a process to island a laminated structure consisting of the polysilicon semiconductor thin film 13 and an insulating film 14, a process to cover the sidewall 17 of the islanded laminated structure with an insulating substance 16, and a process to form a gate electrode 15g on the insulating film 14 and form a source electrode 15s, and a drain electrode 15d connected to the source diffusion region 13s, and the drain diffusion region 13d respectively, via contact holes 26 formed through the insulating film 14. COPYRIGHT: (C)2011,JPO&INPIT
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