| 摘要 |
PURPOSE: A power clamping circuit of a semiconductor memory device is provided to prevent the degradation of a transistor by blocking an external supply power noise through a clamping unit comprised of a plurality of diodes. CONSTITUTION: A first pad inputs an external power potential(VDD). A second pad inputs the ground power potential(VSS). A clamping unit is connected between the first pad and the second pad and blocks the noise and is comprised of N diodes. The clamping unit connects an NMOS diode with a chain type. |
