| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor small in threshold voltage shift and excellent in ON-state characteristics, and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the thin film transistor includes the steps of forming a gate electrode 2, a gate insulating film 3, a first semiconductor layer 10, a second semiconductor layer functioning as an ohmic-contact layer, a source electrode 5 and a drain electrode 6 in this order. At the step of forming the first semiconductor layer 10, a microcrystal layer 11 constituted of a substantially intrinsic microcrystal silicon layer is formed, a defect repairing layer 12a constituted of a low concentration P (phosphorus)-added amorphous silicon layer is formed to reduce crystal defects on the surface of a microcrystal layer 11a in a region disposed in opposition to at least the source electrode 5 and the drain electrode 6, and then an amorphous layer 13a constituted of a substantially intrinsic amorphous silicon layer is formed. COPYRIGHT: (C)2011,JPO&INPIT |
