| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN single-crystal mass and its manufacturing method regarding which crack occurrence is controlled, when making the GaN single-crystal mass grow and processing the grown GaN semiconductor device into a substrate, etc., and to provide a semiconductor device and its manufacturing method, when forming at least a single-layer semiconductor layer on the substrate-like GaN single-crystal mass and manufacturing the semiconductor device. <P>SOLUTION: This GaN single-crystal mass 10 is of a wurtzite-type crystal structure, wherein at 30°C, its elastic constant C<SB>11</SB>is 348 GPas or greater and 365 GPa or less and its elastic constant C<SB>13</SB>is 90 GPa or greater and 98 GPa or less, or its elastic constant C<SB>11</SB>is 352 GPa or greater and 362 GPa or less. <P>COPYRIGHT: (C)2011,JPO&INPIT |
