| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device capable of suppressing an increase in a leakage current and lowering in dielectric strength and further suppressing an increase in wiring capacity. SOLUTION: A second copper wire 24 in a second wiring groove 20 and a plug in a via hole 15 connected to the second wiring groove 20 are arranged between interlayer insulating films 11, 13 formed on a semiconductor substrate 1. Furthermore, a first sidewall 17 and a second sidewall 22 are formed on the sidewall of a via hole 15 and the second sidewall 22 is formed on the sidewall of the second wiring groove 20. Consequently, the film thickness of the sidewall of the via hole 15 is made thicker than the film thickness of the sidewall of the second wiring groove 20. COPYRIGHT: (C)2011,JPO&INPIT |
