发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To enable storage data to be searched at high speed in a NAND type flash memory having a program verify function. <P>SOLUTION: For instance, the flash memory reads search data corresponding to the storage data stored in the block, from a top page of each block in a reverse consulting search mode and compares these search data with nonsearch data from a controller to send a block address and a page address of the search data coincident with the nonsearch data back to the controller. At this time, the flash memory checks the coincidence of the search data and the nonsearch data in the manner of comparing "0" data by utilizing the own provided program verify function. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010287279(A) 申请公布日期 2010.12.24
申请号 JP20090139941 申请日期 2009.06.11
申请人 TOSHIBA CORP 发明人 HIMENO TOSHIHIKO
分类号 G11C16/02;G11C16/04 主分类号 G11C16/02
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