| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state image sensor which has improved condensing efficiency to a light receiving part, and to provide a method of manufacturing the solid-state image sensor. <P>SOLUTION: The solid-state image sensor 100 includes: a semiconductor substrate 101 in which a light receiving part 102 which performs photoelectric conversion is formed in a surface thereof; and an insulating film 107 which is formed on the semiconductor substrate 101. The insulating film 107 includes a waveguide area 111 which is formed above the light receiving part 102 and is a high refractive index region with a refractive index higher than the insulating film 107. The waveguide area 111 is formed by implanting impurities into the insulating film 107. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
