| 摘要 |
PURPOSE: The capacitor forming method in which the bottom electrode of the cylindrical shape controls auger or the phenomenon falling down and the capacitor forming method of the semiconductor device more a lot secures the electrostatic capacity is exhibited. CONSTITUTION: The electrode separation process(501) is proceed the chemical mechanical polishing process so that the first stray pinned layer pattern of the lower part expose. The first stray pinned layer pattern is penetratingly formed in which a part of the first stray pinned layer pattern is eliminated and which exposes the mold layer of the lower part.
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