| 摘要 |
PROBLEM TO BE SOLVED: To analyze and design a transistor with high accuracy. SOLUTION: A method for analysis of a semiconductor device includes: a step of setting an impurity concentration N(x, z) having the dimensions of a channel direction (X direction) and a depth direction (Z direction) according to a preset concentration distribution rule to each of a plurality of nodes 56 for which a channel region 54 is dispersed in the channel direction (X direction); a step of calculating a surface potentialϕ<SB>S0</SB>at each node 56 by dimensionality reduction for reducing the dimension of the depth direction (Z direction) of the impurity concentration N(x, z); a step of correcting the surface potentialϕ<SB>S0</SB>in consideration of interaction between the respective nodes 56; a step of calculating the electrical characteristics of the transistor 50 using the corrected surface potentialϕ<SB>S</SB>; and a step of recording the impurity concentration N(x, z) in a memory device 13 as a model parameter 24 of the transistor 50 when the calculated electrical characteristics and the measured value 22 of the prepared electrical characteristics match within a prescribed range. COPYRIGHT: (C)2011,JPO&INPIT
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