发明名称 TEST WAFER FOR PERFORMANCE OF THROUGH-ELECTRODE PROCESS
摘要 PROBLEM TO BE SOLVED: To satisfy a request that, while an electrode penetrating wafers is formed in order to manufacture a highly-integrated device by sticking the wafers, it has been necessary to provide the commonly-usable wafer in order to evaluate its manufacturing process at a wide performance level, that is, a test wafer. SOLUTION: A way of providing characters indicating the shape and the depth of a hole, the shape of a bottom surface, and design specifications is designed while taking features of the process for the through-electrode into consideration so that the wide performance level of the process can be evaluated. For this purpose, the present invention relates to the test wafers which have patterns of trenches and holes mixedly, plane shapes including round, polygonal, and square shapes, different depths, and round bottom surfaces. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010287704(A) 申请公布日期 2010.12.24
申请号 JP20090139919 申请日期 2009.06.11
申请人 PHILTECH INC 发明人 FURUMURA YUJI;MURA NAOMI;NISHIHARA SHINJI;KATAKURA YOSHIAKI
分类号 H01L21/66;H01L21/3205;H01L23/52 主分类号 H01L21/66
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