发明名称 PHASE CHANGE MEMORY UTILIZING CARBON NANOTUBE, AND METHOD OF MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a phase change memory utilizing a carbon nanotube, which dramatically reduces a contact area between a phase change substance and a lower electrode, is operated while saving power, and further improves the degree of integration, and to provide a method of manufacturing the phase change memory. <P>SOLUTION: The phase change memory utilizing the carbon nanotube includes: a current source electrode for supplying an external current; a phase change substance layer having at least two different states; a plurality of carbon nanotube electrodes arranged between the current source electrode and the phase change substance layer; an insulator formed on the outside of the carbon nanotube electrodes; and a heat generating resistor layer formed between the carbon nanotube electrodes and the phase change substance layer and contacting with the carbon nanotube electrodes. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010287910(A) 申请公布日期 2010.12.24
申请号 JP20100181352 申请日期 2010.08.13
申请人 KOREA ADVANCED INST OF SCI TECHNOL 发明人 CHOI YANG-KYU;KIM KUK-HWAN
分类号 H01L27/105;H01L45/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L27/105
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