发明名称 |
PHASE CHANGE MEMORY UTILIZING CARBON NANOTUBE, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a phase change memory utilizing a carbon nanotube, which dramatically reduces a contact area between a phase change substance and a lower electrode, is operated while saving power, and further improves the degree of integration, and to provide a method of manufacturing the phase change memory. <P>SOLUTION: The phase change memory utilizing the carbon nanotube includes: a current source electrode for supplying an external current; a phase change substance layer having at least two different states; a plurality of carbon nanotube electrodes arranged between the current source electrode and the phase change substance layer; an insulator formed on the outside of the carbon nanotube electrodes; and a heat generating resistor layer formed between the carbon nanotube electrodes and the phase change substance layer and contacting with the carbon nanotube electrodes. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2010287910(A) |
申请公布日期 |
2010.12.24 |
申请号 |
JP20100181352 |
申请日期 |
2010.08.13 |
申请人 |
KOREA ADVANCED INST OF SCI TECHNOL |
发明人 |
CHOI YANG-KYU;KIM KUK-HWAN |
分类号 |
H01L27/105;H01L45/00;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|