| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can secure sufficient delay time in a small area. <P>SOLUTION: The semiconductor integrated circuit device includes: first inverters (PT21, NT21) comprising a first transistor for performing charge to a charge point based on input and a second transistor for performing discharge from a discharge point based on the input; a P-type third transistor and an N-type fourth transistor (PT22, NT22) having drain-source paths formed in parallel to each other between the charge point and the discharge point; and a second inverter (INV21) for obtaining a delay signal of the input from the charge point or the discharge point by inverting the potential of the charge point or the discharge point to be supplied to the gates of the third and fourth transistors. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
