| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which improves a read margin, and prevents lowering of read speed and write margin. <P>SOLUTION: A power supply voltage control part 1 supplies a first power supply voltage and a second power supply voltage with a level lower than that of the first power supply voltage to a memory cell MC. When data are read from the memory cell MC, at least one of setting the level of the first power supply voltage higher than that of the first power supply voltage in data writing on the memory cell MC, and setting the level of the second power supply voltage lower than that of the second power supply voltage in data writing on the memory cell MC is conducted. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
