| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of measuring characteristics of a semiconductor without destruction even at room temperature. SOLUTION: The method of measuring characteristics of the semiconductor includes: irradiating a semiconductor sample 52 with probe light while the semiconductor sample 52 is irradiated with pump light to generate optical phonons, and measuring the attenuation coefficient and frequency of the generated optical phonons through time resolution measurement of probe light reflected by the semiconductor sample 52 (step S100); determining the carrier polarity of the semiconductor sample 52 by comparing the measured attenuation coefficient with an attenuation coefficient of optical phonons of an intrinsic semiconductor made of the same elements with the semiconductor sample 52 (step S110); and deriving the carrier concentration of the semiconductor sample 52 by applying the measured frequency of the optical phonons to a calibration curve defining the relationship between the frequency of optical phonons of a semiconductor, made of the same elements with the semiconductor sample 52, and the carrier density (step S120). COPYRIGHT: (C)2011,JPO&INPIT
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