| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of stably feeding in an electrolytic plating process. SOLUTION: The method for manufacturing the semiconductor device includes: preparing a semiconductor wafer 1, having a first region 20 as an effective chip region, and a second region 30 surrounding the peripheral border of the first region 20; forming a resin protrusion 40 to the second region 30; forming a first conductive type layer 50 to the first region 20 and the second region 30 so that the first conductive type layer 50 includes a first part 51 positioned on the resin protrusion 40 ; forming a resist layer 60 on the first conductive type layer 50; removing the resist layer 60 positioning at least on the first part 51 of the first conductive type layer 50; and forming a second conductive layer 90 on the first conductive type layer 50 through electrolytic plating by feeding to the first part 51 of the first conductive type layer 50. COPYRIGHT: (C)2011,JPO&INPIT
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